د ويکيپېډيا، وړیا پوهنغونډ له خوا
Silicon, 14 Si Spectral lines of silicon
Pronunciation / ˈ s ɪ l ɪ k ən / or / ˈ s ɪ l ɪ k ɒ n / SIL-IK -ən or SIL-IK -on Appearance crystalline, reflective with bluish-tinged faces اټومي شمیره (Z ) 14 گروپ , پیریود group 14 (carbon group) , period 3 بلاک p-block Element category metalloid معياري اټومي وزن (A r ) [28.084, 28.086][ ۱] conventional: 28.085 Electron configuration [Ne ] 3s2 3p2 Electrons per shell
2, 8, 4 حالت (at STP ) جامد دويلې کيدو ټکى 1687 K (1414 °C, 2577 °F) يشنا ټکی 3538 K (3265 °C, 5909 °F) Density near r.t. 2.3290 g/cm3 when liquid, at m.p. 2.57 g/cm3 Heat of fusion 50.21 kJ/mol Heat of vaporization 383 kJ/mol Molar heat capacity 19.789 J/(mol·K) Vapor pressure
P (Pa)
1
10
100
1 k
10 k
100 k
at T (K)
1908
2102
2339
2636
3021
3537
Oxidation states 4 , 3, 2, 1[ ۲] −1, −2, −3, −4 (an amphoteric oxide)Electronegativity Pauling scale: 1.90 Ionization energies 1st: 786.5 kJ/mol 2nd: 1577.1 kJ/mol 3rd: 3231.6 kJ/mol (more ) Atomic radius empirical: 111 pm Covalent radius 111 pm Van der Waals radius 210 pm Crystal structure face-centered diamond-cubic Diamond cubic crystal structure for silicon Speed of sound thin rod 8433 m/s (at 20 °C) Thermal expansion 2.6 µm/(m·K) (at 25 °C) د تودوخې تېرېدنه 149 W/(m·K) Electrical resistivity 2.3کينډۍ:E Ω·m (at 20 °C)[ ۳] Band gap 1.12 eV (at 300 K) Magnetic ordering diamagnetic [ ۴] Magnetic susceptibility (χ mol ) −3.9·10−6 cm3 /mol (298 K)[ ۵] Young's modulus 130–188 GPa[ ۶] Shear modulus 51–80 GPa[ ۶] Bulk modulus 97.6 GPa[ ۶] Poisson ratio 0.064–0.28[ ۶] Mohs hardness 7 CAS Number 7440-21-3 Naming after Latin 'silex' or 'silicis', meaning flint Prediction Antoine Lavoisier (1787) Discovery and first isolationJöns Jacob Berzelius [ ۷] [ ۸] (1823)Named by Thomas Thomson (1817)
| references | in Wikidata
سېلېکان (په انگرېزي : Silicon ) له کیمیاوي عناصرو څخه یو دی چې په تناوبي جدول کې د Si سمبول او ۱۴ اتمي شمېرې په وسیله ښودل شوی دی.
↑ Meija, J.; Coplen, T. B. (2016). "Atomic weights of the elements 2013 (IUPAC Technical Report)" . Pure Appl. Chem. 88 (3): 265–91. doi :10.1515/pac-2015-0305 .
↑ Ram, R. S.; et al. (1998). "Fourier Transform Emission Spectroscopy of the A2D–X2P Transition of SiH and SiD" (PDF) . J. Mol. Spectr . 190 : 341–352. PMID 9668026 .
↑ Eranna, Golla (2014). Crystal Growth and Evaluation of Silicon for VLSI and ULSI . CRC Press. p. 7. ISBN 978-1-4822-3281-3 .
↑ Magnetic susceptibility of the elements and inorganic compounds , in کينډۍ:RubberBible86th
↑ Weast, Robert (1984). CRC, Handbook of Chemistry and Physics . Boca Raton, Florida: Chemical Rubber Company Publishing. pp. E110. ISBN 0-8493-0464-4 .
↑ ۶٫۰ ۶٫۱ ۶٫۲ ۶٫۳ Hopcroft, Matthew A.; Nix, William D.; Kenny, Thomas W. (2010). "What is the Young's Modulus of Silicon?" . Journal of Microelectromechanical Systems . 19 (2): 229. doi :10.1109/JMEMS.2009.2039697 .
↑ Weeks, Mary Elvira (1932). "The discovery of the elements: XII. Other elements isolated with the aid of potassium and sodium: beryllium, boron, silicon, and aluminum". Journal of Chemical Education . 9 (8): 1386–1412. Bibcode :1932JChEd...9.1386W . doi :10.1021/ed009p1386 .
↑ Voronkov, M. G. (2007). "Silicon era". Russian Journal of Applied Chemistry . 80 (12): 2190. doi :10.1134/S1070427207120397 .
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